The role of required volunteerism and service-learning on student perceptions of civic responsibility

Civic education has historically been one of the fundamental goals of U.S. higher education. However, the importance placed on teaching civic responsibility in this environment declined during the 20th century. Civic education experienced a resurgence in the 1980s, and service-learning pedagogy and other forms of community-based learning became increasingly popular. As a result, a number of high schools and institutions of higher education have implemented mandatory service programs aimed at encouraging students’ long-term engagement in community and civic activities. However, there is a dearth of research on mandatory service programs and the efficacy of requiring students to participate in community service. This study examined a mandatory service program implemented at a U.S. higher education institution using a longitudinal, mixed methods study of the service-learning and community service experiences of one cohort. Potential relationships were investigated between the number of service hours completed and/or service-learning courses taken and respondents’ scores on a survey. Respondents completed the survey at three different data points during a 4-year enrollment period at the institution. Examined variables included gender, work location and hours, religious affiliation, voting habits, knowledge of the service requirement, prior service, and overall satisfaction with the institution’s service program. Historical focus group data were also mined to explore potential connections between students’ service experiences and views on civic responsibility. This study responded to the need for more longitudinal studies on the outcomes of college student service activities and for more research on mandatory service programs. It also adds to the body of knowledge on service-learning pedagogy and volunteerism. The findings indicated that implementing a graduation service requirement and service-learning curriculum was not effective in altering students’ perceptions of civic responsibility. However, the number of service hours completed and the number of service-learning courses taken in the first year were indicators of future service activities. Additionally, although a specific activity that increased students’ perceptions of civic responsibility was not identified, the cohort’s aggregate score improved over the course of the study. Data from subsequent cohorts should be analyzed, as these findings have policy and programmatic implications for the institution included in this study

Location Determinants of Food Manufacturing Investment: Are Non-metropolitan Counties Competitive?

Food manufacturing site selection is determined by infrastructure, agglomeration, product and input markets, labor markets, and fiscal attributes of local communities. This article examines how these factors influence location decisions across the rural-urban continuum in the lower forty-eight states of the U.S. Negative binomial regression and spatial clustering methods are used to forecast new food processor location patterns at the county level, 2000-2004. Remote rural areas are at a comparative disadvantage with respect to attracting food processors, but non-metropolitan counties with economic links to urban core areas may be attractive investment sites for footloose, supply, and demand-oriented food manufacturers.firm location, food manufacturing, negative binomial regression, spatial clustering, Community/Rural/Urban Development, R1, R3,

Direct vs. indirect optical recombination in Ge films grown on Si substrates

The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the photoluminescence signal from Ge films is mainly associated with its direct band gap. Using a new class of Ge-on-Si films grown by a recently introduced CVD approach, we study the direct and indirect photoluminescence from intrinsic and doped samples and we conclude that the origin of the discrepancy is the lack of self-absorption in thin Ge films combined with a deviation from quasi-equilibrium conditions in the conduction band. The latter is confirmed by a simple model suggesting that the deviation from quasi-equilibrium is caused by the much shorter recombination lifetime in the films relative to bulk Ge

Deep Physics-aware Inference of Cloth Deformation for Monocular Human Performance Capture

Recent monocular human performance capture approaches have shown compelling dense tracking results of the full body from a single RGB camera. However, existing methods either do not estimate clothing at all or model cloth deformation with simple geometric priors instead of taking into account the underlying physical principles. This leads to noticeable artifacts in their reconstructions, such as baked-in wrinkles, implausible deformations that seemingly defy gravity, and intersections between cloth and body. To address these problems, we propose a person-specific, learning-based method that integrates a finite element-based simulation layer into the training process to provide for the first time physics supervision in the context of weakly-supervised deep monocular human performance capture. We show how integrating physics into the training process improves the learned cloth deformations, allows modeling clothing as a separate piece of geometry, and largely reduces cloth-body intersections. Relying only on weak 2D multi-view supervision during training, our approach leads to a significant improvement over current state-of-the-art methods and is thus a clear step towards realistic monocular capture of the entire deforming surface of a clothed human

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySn y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySny might take place at much lower Sn contents than the theory predicts, suggesting that these Ge1-ySny could become very promising direct bandgap semiconductors

Observation of Heavy- and Light-hole Split Direct Bandgap Photoluminescence from Tensile-strained GeSn (0.03% Sn)

Temperature- (T-) and laser power-dependent photoluminescence (PL) measurements have been made for the tensile-strained, undoped GeSn (0.03% Sn) film grown on Si substrate. The PL results show not only clear strain-split direct bandgap transitions to the light-hole (LH) and heavy-hole (HH) bands at energies of 0.827 and 0.851 eV at 10 K, respectively, but also clearly show both strong direct and indirect bandgap related PL emissions at almost all temperatures, which are rarely observed. This split of PL emissions can be directly observed only at low T and moderate laser power, and the two PL peaks merge into one broad PL peak at room temperature, which is mainly due to the HH PL emission rather than LH transition. The evolution of T-dependent PL results also clearly show the competitive nature between the direct and indirect bandgap related PL transitions as T changes. The PL analysis also indicates that the energy gap reduction in Γ valley could be larger, whereas the bandgap reduction in L valley could be smaller than the theory predicted. As a result, the separation energy between Γ and L valleys (∼86 meV at 300 K) is smaller than theory predicted (125 meV) for this Ge-like sample, which is mainly due to the tensile strain. This finding strongly suggests that the indirect-to-direct bandgap transition of Ge1−ySny could be achieved at much lower Sn concentration than originally anticipated if one utilizes the tensile strain properly. Thus, Ge1−ySny alloys could be attractive materials for the fabrication of direct bandgap Si-based light emitting devices

Complementary Metal-oxide Semiconductor-compatible Detector Materials with Enhanced 1550 nm Responsivity via Sn-doping of Ge/Si(100)

Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from \u3ci\u3ep\u3c/i\u3e-Ge\u3csub\u3e1 - y\u3c/sub\u3eSn\u3csub\u3ey\u3c/sub\u3e (y = 0.06%) Grown on \u3ci\u3en\u3c/i\u3e-Si Substrate

Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1−ySny layer alone

{3D} Morphable Face Models -- Past, Present and Future

In this paper, we provide a detailed survey of 3D Morphable Face Models over the 20 years since they were first proposed. The challenges in building and applying these models, namely capture, modeling, image formation, and image analysis, are still active research topics, and we review the state-of-the-art in each of these areas. We also look ahead, identifying unsolved challenges, proposing directions for future research and highlighting the broad range of current and future applications